{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"1N645-1E3","brand":"Microchip Technology","brandSlug":"microchip","productSlug":"1N645-1E3","canonicalUrl":"https://icboms.com/microchip/1N645-1E3","factsUrl":"https://icboms.com/api/mcp/products/1N645-1E3","rawCanonicalId":null},"summary":{"shortDescription":"Microchip Technology 1N645-1E3 standard recovery diode, 225 V reverse voltage, 400 mA average rectified current, DO-204AH (DO-35) axial-lead glass package, through-hole mount.","salesMarkdown":"The 1N645-1E3 is a standard recovery silicon diode from Microchip Technology, rated for 225 V DC reverse voltage and 400 mA average rectified current. It is classified as Standard Recovery with a reverse recovery time greater than 500 ns at forward currents above 200 mA. Forward voltage drop is specified at 1 V maximum when conducting 400 mA, and reverse leakage is held to 50 nA at the 225 V reverse voltage rating — a tight leakage spec that matters for high-impedance bias circuits or low-duty-cycle rectification where leakage current can dominate the off-state power budget. The DO-35 body is approximately 0.166 inches long with 0.020-inch diameter leads — a standard footprint that mates with 0.100-inch pitch through-hole layouts on legacy or high-reliability boards where surface-mount is not preferred. The glass hermetic seal gives this package a junction operating range of -65°C to 175°C, suited for environments with wide thermal swings — avionics, downhole instrumentation, or military power supplies where the epoxy-bodied SMD alternatives would degrade above 150°C. The base product number 1N645 covers the broader family; the -1E3 suffix denotes the specific screening and packaging variant.","metaTitle":"1N645-1E3 Microchip Standard Recovery Diode","metaDescription":"1N645-1E3 standard recovery diode from Microchip Technology. 225V reverse voltage, 400mA average current, DO-35 axial package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Microchip Technology","Speed":"Standard Recovery >500ns, > 200mA (Io)","Series":"-","Package":"Bag","Diode Type":"Standard","Mounting Type":"Through Hole","Package / Case":"DO-204AH, DO-35, Axial","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"1N645","Capacitance @ Vr, F":"-","Supplier Device Package":"DO-35 (DO-204AH)","Current - Reverse Leakage @ Vr":"50 nA @ 225 V","Voltage - DC Reverse (Vr) (Max)":"225 V","Current - Average Rectified (Io)":"400mA","Operating Temperature - Junction":"-65°C~175°C","Voltage - Forward (Vf) (Max) @ If":"1 V @ 400 mA"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.4550","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/fe08e14592a0012d20e37c97b7536c96.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/1N645-1E3/alternatives.json"},"ai":{"faq":[{"question":"What is the reverse recovery time of the 1N645-1E3?","answer":"It is classified as Standard Recovery with a reverse recovery time greater than 500 ns when the forward current exceeds 200 mA. This is a general-purpose rectifier, not a fast-recovery or ultrafast diode."},{"question":"What package does the 1N645-1E3 come in?","answer":"The device is supplied in a DO-204AH (DO-35) axial-lead glass package, through-hole mount. The supplier device package is DO-35 (DO-204AH)."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/microchip/1N645-1E3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/microchip/1N645-1E3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}