{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"1N6076US","brand":"Microchip Technology","brandSlug":"microchip","productSlug":"1N6076US","canonicalUrl":"https://icboms.com/microchip/1N6076US","factsUrl":"https://icboms.com/api/mcp/products/1N6076US","rawCanonicalId":null},"summary":{"shortDescription":"Microchip Technology 1N6076US Fast Recovery Diode, Standard type, 6 A average rectified, 50 V reverse, 30 ns trr, SQ-MELF D-5B surface mount, Bulk.","salesMarkdown":"## Fast recovery switching — 30 ns trr at 6 A The 1N6076US is a standard fast-recovery rectifier with a reverse recovery time of 30 ns, classifying it as Fast Recovery (≤ 500 ns, > 200 mA Io). That 30 ns trr is the time the diode takes to sweep stored charge out of the junction and block reverse voltage — in a 100 kHz boost converter, the recovery losses scale with trr and the switching frequency, so a 30 ns diode keeps the switching node clean and the heatsink smaller than a slower 200 ns part would. Rated for 6 A average rectified current (Io) with a 50 V DC reverse voltage maximum (Vr). The forward voltage drop is specified at 1.76 V typical when driving 18.8 A forward current — that is a pulsed or surge condition, not the continuous average. For continuous 6 A operation, the Vf will be lower; the 1.76 V figure at 18.8 A tells you the die can handle short-duration overloads without exceeding the junction temperature limit. Reverse leakage is 5 µA at 50 V reverse bias, junction temperature range from -65°C to 155°C. The leakage doubles roughly every 10°C above 25°C, so at 125°C junction the leakage could approach 80 µA — still negligible for most power circuits, but worth budgeting in a high-impedance bias supply where leakage current competes with the load current. ## SQ-MELF D-5B — hermetic surface-mount package Housed in a SQ-MELF, E case (supplier device package D-5B), a hermetic ceramic surface-mount package with metallized end caps. The SQ-MELF (Surface Mount Qualified MELF) is a cylindrical body with flat sides — it self-centers during reflow and offers better thermal cycling reliability than a standard MELF because the flat sides reduce rolling during solder paste deposition. The D-5B variant is the Microchip specific marking for this outline. Surface mount mounting — the end caps are soldered directly to the PCB pads. The package is rated for the full -65°C to 155°C junction temperature range, so it suits high-reliability and military-temperature applications where a plastic SMD package would delaminate under thermal shock. No exposed metal tab; heat is conducted through the end-cap solder joints and the PCB copper.","metaTitle":"Microchip 1N6076US Fast Recovery Diode, 6A, 50V, D-5B","metaDescription":"1N6076US fast recovery rectifier, 6A average, 50V reverse, 30ns trr. Active production, Microchip Technology. SQ-MELF D-5B. Quoted to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Microchip Technology","Speed":"Fast Recovery =< 500ns, > 200mA (Io)","Series":"-","Package":"Bulk","Diode Type":"Standard","Mounting Type":"Surface Mount","Package / Case":"SQ-MELF, E","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"1N6076","Capacitance @ Vr, F":"-","Supplier Device Package":"D-5B","Reverse Recovery Time (trr)":"30 ns","Current - Reverse Leakage @ Vr":"5 µA @ 50 V","Voltage - DC Reverse (Vr) (Max)":"50 V","Current - Average Rectified (Io)":"6A","Operating Temperature - Junction":"-65°C~155°C","Voltage - Forward (Vf) (Max) @ If":"1.76 V @ 18.8 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$22.5000","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/12268cf719b5a07dc12bb6da8ee3311a.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/1N6076US/alternatives.json"},"ai":{"faq":[{"question":"What is the reverse recovery time (trr) of the 1N6076US?","answer":"The 1N6076US has a reverse recovery time of 30 ns, classifying it as a Fast Recovery diode (≤ 500 ns, > 200 mA Io). This 30 ns trr is the time to sweep stored charge and block reverse voltage, making it suitable for switching frequencies up to several hundred kHz."},{"question":"What package does the 1N6076US come in?","answer":"It is supplied in a SQ-MELF, E case (Microchip supplier device package D-5B), a hermetic ceramic surface-mount package. The package is rated for the full -65°C to 155°C junction temperature range."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/microchip/1N6076US","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/microchip/1N6076US when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}