{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"1N6073","brand":"Microchip Technology","brandSlug":"microchip","productSlug":"1N6073","canonicalUrl":"https://icboms.com/microchip/1N6073","factsUrl":"https://icboms.com/api/mcp/products/1N6073","rawCanonicalId":null},"summary":{"shortDescription":"Microchip Technology 1N6073 Fast Recovery Rectifier Diode, Standard Diode Type, 850 mA, 50 V, 30 ns trr, Through Hole, Axial Package, Bulk.","salesMarkdown":"## 850 mA, 50 V, 30 ns trr — fast recovery in an axial lead The 1N6073 is a standard fast-recovery rectifier diode rated for 850 mA average rectified current (Io) with a 50 V maximum reverse voltage (Vr). Its 30 ns reverse recovery time (trr) places it squarely in the fast-recovery class (≤ 500 ns, > 200 mA Io), making it a natural fit for high-frequency rectification, snubbing, and freewheeling circuits where switching losses matter. The axial through-hole package (A, Axial) is straightforward to hand-rework — two solder joints, no fine-pitch alignment. Pin 1 orientation is unambiguous: the cathode band is clearly marked on the body. It will survive a hot-air rework cycle without issue; the leaded form also lets you bend and trim to fit tight layouts. At 25°C, reverse leakage is just 1 µA at 50 V (Vr). Leakage roughly doubles every 10°C, so at 125°C junction you are looking at about 32 µA — still negligible for most circuits, but worth budgeting in high-impedance or low-power designs. Forward voltage (Vf) is specified at 2.04 V max at 9.4 A — a pulsed condition, not continuous. In continuous 850 mA service, expect Vf to be significantly lower. The 30 ns trr is measured at typical switching conditions; the recovery is soft enough that ringing across the diode is minimal with proper snubbing. ## Active production — sourcing through distribution Microchip Technology lists the 1N6073 as Active.","metaTitle":"1N6073 Fast Recovery Diode, 850 mA, 50 V, Axial – Microchip","metaDescription":"1N6073 fast recovery rectifier diode from Microchip Technology. 850 mA, 50 V, 30 ns trr, axial through-hole package. Active production, sourced to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Microchip Technology","Speed":"Fast Recovery =< 500ns, > 200mA (Io)","Series":"-","Package":"Bulk","Diode Type":"Standard","Mounting Type":"Through Hole","Package / Case":"A, Axial","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"-","Reverse Recovery Time (trr)":"30 ns","Current - Reverse Leakage @ Vr":"1 µA @ 50 V","Voltage - DC Reverse (Vr) (Max)":"50 V","Current - Average Rectified (Io)":"850mA","Operating Temperature - Junction":"-65°C~155°C","Voltage - Forward (Vf) (Max) @ If":"2.04 V @ 9.4 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/bceaf07fc2634d8473b829301ecb1307.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/1N6073/alternatives.json"},"ai":{"faq":[{"question":"How do I get current pricing and availability for 1N6073?","answer":"Submit an RFQ through this listing."},{"question":"What is 1N6073's listed speed (Fast Recovery =< 500ns, > 200mA (Io))?","answer":"The 1N6073 is classified as a fast recovery diode (≤ 500 ns, > 200 mA Io) with a reverse recovery time of 30 ns."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/microchip/1N6073","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/microchip/1N6073 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}