{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"1N6031B/TR","brand":"Microchip Technology","brandSlug":"microchip","productSlug":"1N6031B-TR","canonicalUrl":"https://icboms.com/microchip/1N6031B-TR","factsUrl":"https://icboms.com/api/mcp/products/1N6031B%2FTR","rawCanonicalId":null},"summary":{"shortDescription":"Microchip Technology 1N6031B/TR Zener diode, 200 V nominal, 500 mW, ±5% tolerance, DO-204AH (DO-35) axial, Tape & Reel.","salesMarkdown":"## 200 V Zener with wide temperature range The 1N6031B/TR is a 200 V Zener diode in the standard DO-35 axial package, rated for 500 mW continuous power dissipation. The ±5% tolerance on the nominal voltage means the actual Zener breakdown sits between 190 V and 210 V — tight enough for most voltage-reference and clamping circuits in industrial and telecom gear. ## Reverse leakage and forward drop Reverse leakage is specified at 100 nA maximum when biased at 152 V — 76% of the nominal Zener voltage. That low leakage keeps the diode from loading high-impedance bias nodes in standby or fault-sensing circuits. Maximum forward voltage is 1.1 V at 200 mA forward current, typical for a silicon Zener of this voltage class. The 2 kOhms maximum Zener impedance (Zzt) means the regulation slope is moderate; expect about 2 V of voltage shift per 1 mA of current change near the test point.","metaTitle":"Microchip 1N6031B/TR Zener Diode, 200 V, 500 mW, DO-35","metaDescription":"Active Microchip 1N6031B/TR Zener diode, 200 V nominal, 500 mW, ±5% tolerance, DO-35 axial. -65 to 175°C. Quoted to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Microchip Technology","Series":"-","Package":"Tape & Reel (TR)","Tolerance":"±5%","Power - Max":"500 mW","Mounting Type":"Through Hole","Package / Case":"DO-204AH, DO-35, Axial","Product Status":"Active","lifecycle_stage":"eol_hot","Impedance (Max) (Zzt)":"2 kOhms","Operating Temperature":"-65°C~175°C","Supplier Device Package":"DO-35","Voltage - Zener (Nom) (Vz)":"200 V","Current - Reverse Leakage @ Vr":"100 nA @ 152 V","Voltage - Forward (Vf) (Max) @ If":"1.1 V @ 200 mA"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.8500","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/87171d2e12030478252c3bb19e7c6e91.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/1N6031B%2FTR/alternatives.json"},"ai":{"faq":[{"question":"What is the reverse leakage specification for 1N6031B/TR?","answer":"Maximum reverse leakage is 100 nA at a reverse voltage of 152 V. This low leakage makes the diode suitable for high-impedance bias or voltage-sensing applications."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/microchip/1N6031B-TR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/microchip/1N6031B-TR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}