{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"1N5822/TR","brand":"Microchip Technology","brandSlug":"microchip","productSlug":"1N5822-TR","canonicalUrl":"https://icboms.com/microchip/1N5822-TR","factsUrl":"https://icboms.com/api/mcp/products/1N5822%2FTR","rawCanonicalId":null},"summary":{"shortDescription":"Microchip Technology 1N5822/TR Schottky diode, 3 A average rectified, 40 V reverse, 500 mV forward drop, axial B package, MIL-PRF-19500/620 series, tape and reel.","salesMarkdown":"## 3 A, 40 V Schottky — military-grade screening The 1N5822/TR is a 3 A average rectified Schottky diode with a 40 V maximum reverse voltage, housed in an axial B package. The forward drop is 500 mV maximum at 3 A, typical for a 40 V Schottky — this sets the conduction loss floor in a power supply or OR-ing circuit. Built to the MIL-PRF-19500/620 specification, this diode is screened to military reliability standards — the junction temperature range of -65 to 125 °C covers avionics, satellite, and downhole environments where commercial parts would not survive. ## Switching speed and reverse leakage Listed as fast recovery (≤ 500 ns, > 200 mA Io), the Schottky barrier inherently switches faster than a pn-junction rectifier — no stored charge to sweep out, so the recovery time is dominated by the junction capacitance and the external circuit. For a 60 Hz line rectifier the speed is irrelevant; for a 100 kHz DC-DC converter it keeps switching losses low. Reverse leakage is 100 µA at 40 V — a figure that rises sharply with junction temperature. At 125 °C the leakage can dominate the thermal budget, so the heatsinking and derating need to account for the hot leakage, not just the 25 °C number.","metaTitle":"1N5822/TR Schottky Diode, 3 A, 40 V, Axial","metaDescription":"1N5822/TR Schottky rectifier, 3 A average, 40 V reverse, 500 mV Vf at 3 A. MIL-PRF-19500/620 series. Active production. Quoted to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Microchip Technology","Speed":"Fast Recovery =< 500ns, > 200mA (Io)","Series":"Military, MIL-PRF-19500/620","Package":"Tape & Reel (TR)","Diode Type":"Schottky","Mounting Type":"Through Hole","Package / Case":"B, Axial","Product Status":"Active","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"-","Current - Reverse Leakage @ Vr":"100 µA @ 40 V","Voltage - DC Reverse (Vr) (Max)":"40 V","Current - Average Rectified (Io)":"3A","Operating Temperature - Junction":"-65°C~125°C","Voltage - Forward (Vf) (Max) @ If":"500 mV @ 3 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$13.0800","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/c4c0212076b547bc20e473ae7a1adbe2.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What military specification does the 1N5822/TR meet?","answer":"The 1N5822/TR is built to MIL-PRF-19500/620, the military performance specification for Schottky rectifier diodes. This includes screening for temperature extremes, hermeticity, and reliability."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/microchip/1N5822-TR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/microchip/1N5822-TR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}