{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"1N5819UR-1/TR","brand":"Microchip Technology","brandSlug":"microchip","productSlug":"1N5819UR-1-TR","canonicalUrl":"https://icboms.com/microchip/1N5819UR-1-TR","factsUrl":"https://icboms.com/api/mcp/products/1N5819UR-1%2FTR","rawCanonicalId":null},"summary":{"shortDescription":"Microchip Technology 1N5819UR-1/TR Schottky diode, 45 V reverse, 1 A forward, 490 mV Vf, DO-213AB MELF, tape and reel.","salesMarkdown":"## Package and board integration — DO-213AB MELF footprint The 1N5819UR-1/TR ships in the DO-213AB MELF (Metal Electrode Leadless Face) package, also designated LL41. This is a glass-passivated, hermetic barrel — the glass body seals the junction against moisture and ionic contamination, which matters for conformal-coated assemblies in humid or vacuum environments. The MELF footprint is cylindrical; the solder-paste stencil must be designed with a reduced aperture (typically 80% of the pad width) to prevent the component from rolling during reflow. The tape-and-reel format supports automated pick-and-place at standard feeder pitches. ## Forward drop and switching speed — the Schottky advantage This lower conduction loss improves efficiency in low-voltage rails (3.3 V, 5 V) where every 100 mV of diode drop eats into the output margin. The Schottky barrier is a majority-carrier device with no stored charge, so reverse recovery is inherently fast. The datasheet confirms recovery ≤ 500 ns at forward currents above 200 mA, making this diode suitable for switching frequencies above 100 kHz in flyback and boost converters. ## Temperature grade and reverse leakage — derating for high-ambient designs The junction operating range spans -65°C to 125°C, which qualifies the part for military/aerospace temperature cycling. At the cold end the forward drop increases slightly; at the hot end the reverse leakage dominates the thermal budget. Reverse leakage is specified at 50 µA maximum when the device blocks 45 V at 25°C. Schottky leakage doubles approximately every 10°C rise in junction temperature, so at 100°C ambient the leakage current can approach several milliamps. Designers should derate the reverse voltage or add a heatsink pad when the diode operates near its thermal limit. ## Junction capacitance — signal-path loading With 70 pF typical capacitance at 5 V reverse bias and 1 MHz, the 1N5819UR-1/TR loads a high-frequency signal line less than a standard 1 A Schottky in a larger package. This makes it usable as a clamping diode on data lines up to a few MHz, though the capacitance still exceeds what a dedicated TVS or RF Schottky would offer. Microchip Technology lists the 1N5819UR-1/TR as Active. The part is in current manufacture and available through authorized distribution channels.","metaTitle":"Microchip 1N5819UR-1/TR Schottky Diode, 45 V, 1 A, DO-213AB","metaDescription":"1N5819UR-1/TR Schottky rectifier, 45 V reverse, 1 A forward, 490 mV Vf, DO-213AB MELF. Active production. Sourced to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Microchip Technology","Speed":"Fast Recovery =< 500ns, > 200mA (Io)","Series":"-","Package":"Tape & Reel (TR)","Diode Type":"Schottky","Mounting Type":"Surface Mount","Package / Case":"DO-213AB, MELF (Glass)","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"1N5819","Capacitance @ Vr, F":"70pF @ 5V, 1MHz","Supplier Device Package":"DO-213AB (MELF, LL41)","Current - Reverse Leakage @ Vr":"50 µA @ 45 V","Voltage - DC Reverse (Vr) (Max)":"45 V","Current - Average Rectified (Io)":"1A","Operating Temperature - Junction":"-65°C~125°C","Voltage - Forward (Vf) (Max) @ If":"490 mV @ 1 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$8.5350","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/91aed5f6a19029bb1b25fcd8adc9e948.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What package does 1N5819UR-1/TR use and what are the board-level considerations?","answer":"The device is housed in a DO-213AB MELF (LL41) glass-passivated barrel. The cylindrical body requires a reduced solder-paste stencil aperture to prevent tombstoning during reflow. The tape-and-reel format supports standard pick-and-place assembly."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/microchip/1N5819UR-1-TR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/microchip/1N5819UR-1-TR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}