{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"1N5711UB","brand":"Microchip Technology","brandSlug":"microchip","productSlug":"1N5711UB","canonicalUrl":"https://icboms.com/microchip/1N5711UB","factsUrl":"https://icboms.com/api/mcp/products/1N5711UB","rawCanonicalId":null},"summary":{"shortDescription":"Microchip Technology 1N5711UB Schottky diode, Military MIL-PRF-19500/444 series, 50 V reverse, 33 mA average, 2 pF capacitance, 3-SMD no-lead package.","salesMarkdown":"## Military-qualified Schottky in a no-lead SMD package The 1N5711UB is a Schottky barrier diode screened to MIL-PRF-19500/444, the military specification for small-signal Schottky diodes. The UB suffix denotes a 3-terminal, no-lead surface-mount package — the die sits in a ceramic cavity with solderable pads on the bottom face, not wire-bonded to a leadframe. This construction eliminates the parasitic inductance of a conventional leaded package and keeps the capacitance at 2 pF at zero bias, measured at 1 MHz. Rated for 50 V DC reverse voltage and 33 mA average rectified current, the diode is intended for low-power, high-frequency detector and mixer circuits where the Schottky's fast switching and low forward voltage (1 V maximum at 15 mA) matter more than current handling. ## Parametric profile for RF and detector applications The 2 pF capacitance at zero bias sets the upper frequency limit: in a 50-ohm system the capacitive reactance at 1 GHz is about 80 ohms, so the diode still presents a reasonable impedance match for detector and mixer designs up to several gigahertz. The forward voltage of 1 V at 15 mA is typical for a small-signal Schottky — the barrier height is optimised for low turn-on rather than low leakage. For applications requiring lower Vf at the expense of higher leakage, a germanium or hot-carrier diode would be a different trade; the 1N5711UB sits on the low-leakage side of the Schottky family.","metaTitle":"Microchip 1N5711UB Schottky Diode, 50V, 33mA","metaDescription":"1N5711UB Schottky diode, 50V reverse, 33mA average, 2pF capacitance. MIL-PRF-19500/444 qualified. Active production. Sourced to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Microchip Technology","Speed":"Small Signal =< 200mA (Io), Any Speed","Series":"Military, MIL-PRF-19500/444","Package":"Bulk","Diode Type":"Schottky","Mounting Type":"Surface Mount","Package / Case":"3-SMD, No Lead","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"1N5711","Capacitance @ Vr, F":"2pF @ 0V, 1MHz","Supplier Device Package":"UB","Current - Reverse Leakage @ Vr":"200 nA @ 50 V","Voltage - DC Reverse (Vr) (Max)":"50 V","Current - Average Rectified (Io)":"33mA","Operating Temperature - Junction":"-65°C~150°C","Voltage - Forward (Vf) (Max) @ If":"1 V @ 15 mA"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$22.5000","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/5ac9db26c7c6a82d4e0ba7600fcb5fb7.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the 1N5711UB's military specification?","answer":"The 1N5711UB is qualified to MIL-PRF-19500/444, the military specification for small-signal Schottky diodes. This includes screening, lot acceptance, and quality conformance inspection per the MIL-PRF-19500 general specification."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/microchip/1N5711UB","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/microchip/1N5711UB when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}